amplifier, power, 1.6w 12.75?15.35 ghz MAAPGM0071-DIE m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. rev b preliminary datasheet 1 1. t b = mmic base temperature 2. adjust v gg between ?2.6 and ?1.2v to achieve specified idq. parameter symbol typical units bandwidth f 12.75-15.35 ghz output power p out 32 dbm 1-db compression point p1db 31 dbm small signal gain g 27 db input vswr vswr 1.4:1 gate current i gg 10 ma drain current i dd 1400 ma output vswr vswr 2.7:1 power added efficiency pae 19 % output third order intercept toi 40 dbm third order intermod, pout = 26 dbm (dcl) im3 33.5 dbc features ? 1.6 watt saturated output power level ? variable drain voltage (6-10v) operation ? msag ? process description the MAAPGM0071-DIE is a 4-stage 1.6 w power amplifier with on-chip bias networks. this product is fully matched to 50 ohms on both the input and output. it can be used as a power amplifier stage or as a driver stage in high power applications. fabricated using m/a-com?s repeatable, high performance and highly reliable gaas multifunction self-aligned gate (msag?) process, each device is 100% rf tested on wafer to ensure performance compliance. m/a-com?s msag? process featur es robust silicon-like manu- facturing processes, planar proc essing of ion implanted transis- tors, multiple implant capability enabling power, low-noise, switch and digital fets on a single chip, and polyimide scratch protec- tion for ease of use with automated manufacturing processes. the use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when em- ployed in hermetic packaging. electrical characteristics: t b = 30c 1 , z 0 = 50 , v dd = 8v, i dq = 900ma 2 , p in = 10 dbm, r g = 100 primary applications ? point-to-point radios ? 13 and 15 ghz bands
amplifier, power, 1.6w 12.75?15.35 ghz MAAPGM0071-DIE m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. rev b preliminary datasheet 2 maximum ratings 3 operating instructions this device is static sensitive. please handle with care. to operate the device, follow these steps. 1. apply v gg = -2.7 v, v dd = 0 v. 2. ramp v dd to desired voltage, typically 8.0 v. 3. adjust v gg to set i dq , (approximately @ ?2.0 v). 4. set rf input. 5. power down sequence in reverse. turn v gg off last. characteristic symbol min typ max unit drain voltage v dd 6.0 8.0 10.0 v gate voltage v gg -2.6 -2.0 -1.2 v input power p in 10.0 14.0 dbm thermal resistance jc 10.3 c/w mmic base temperature t b note 5 c recommended operating conditions 4 parameter symbol absolute maximum units input power p in 15.0 dbm drain supply voltage v dd +12.0 v gate supply voltage v gg -3.0 v quiescent drain current (no rf) i dq 1.42 a junction temperature t j 170 c storage temperature t stg -55 to +150 c quiescent dc power dissipated (no rf) p diss 14.3 w 3. operation beyond these limits may result in permanent damage to the part. 4. operation outside of these ranges may reduce product reliability. 5. mmic base temperature = 170c ? jc * v dd * i dq power derating curve, quiescent (no rf) 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 mmic base temperature (oc) peak power dissipation (w)
amplifier, power, 1.6w 12.75?15.35 ghz MAAPGM0071-DIE m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. rev b preliminary datasheet 3 all data is at 30oc mmic base temperature, cw stimulus, unless otherwise noted. figure 6. output power, small signal gain, pae, and drain current vs. junction temperature at 8 v, 13 ghz, and 25% i dss 15 17 19 21 23 25 27 29 31 33 35 30 40 50 60 70 80 90 100 110 120 130 140 150 junction temperature (oc) output power (dbm), gain (db), pae (%) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 drain current (a) pout ssg pae ids figure 1. output power and power added efficiency vs. frequency at v d =8v, p in =10dbm, and 25% idss 20 22 24 26 28 30 32 34 36 38 40 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 frequency (ghz) p out (dbm) 0 5 10 15 20 25 30 35 40 45 50 pae (%) pout pae figure 2. 1db compression point vs. frequency by drain voltage at 25% idss 20 22 24 26 28 30 32 34 36 38 40 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 frequency (ghz) p 1db (dbm) 6v 8v 10v figure 3. saturated output power vs. frequency by drain voltage at 25% idss 20 22 24 26 28 30 32 34 36 38 40 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 frequency (ghz) psat (dbm) 6v 8v 10v figure 4. saturated output power vs. frequency by temperature at 8v and 25% idss 20 22 24 26 28 30 32 34 36 38 40 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 frequency (ghz) psat (dbm) -20oc 30oc 80oc figure 5. small signal gain and input and output vswr vs. frequency by drain voltage at 25% idss 0 4 8 12 16 20 24 28 32 36 40 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 frequency (ghz) gain (db) 1 2 3 4 5 6 vswr 8v input vswr output vswr
amplifier, power, 1.6w 12.75?15.35 ghz MAAPGM0071-DIE m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. rev b preliminary datasheet 4 all data is at 40oc mmic base temperature, cw stimulus, unless otherwise noted. figure 7. output power vs. input power and frequency at 10v and 25% idss 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 -10-8-6-4-2 0 2 4 6 8101214 input power (dbm) output power (dbm) 13 ghz 14 ghz 15 ghz figure 8. gain vs. output power and frequency at 10v and 25% i dss 15 17 19 21 23 25 27 29 31 33 35 14 16 18 20 22 24 26 28 30 32 34 36 38 40 output power (dbm) gain (db) 13 ghz 14 ghz 15 ghz figure 9. power added efficiency vs. input power and frequency at 10v and 25% idss 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 -10-8-6-4-2 0 2 4 6 8101214 input power (dbm) pae (%) 13 ghz 14 ghz 15 ghz figure 10. drain current vs. input power and frequency at 10v and 25% idss 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 input power (dbm) drain current (a) 13 ghz 14 ghz 15 ghz figure 11. output power vs. input power and frequency at 8v and 25% idss 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 -10-8-6-4-2 0 2 4 6 8101214 input power (dbm) output power (dbm) 13 ghz 14 ghz 15 ghz figure 12. gain vs. output power and frequency at 8v and 25% idss 15.0 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0 35.0 14 16 18 20 22 24 26 28 30 32 34 36 38 40 output power (dbm) gain (db) 13 ghz 14 ghz 15 ghz
amplifier, power, 1.6w 12.75?15.35 ghz MAAPGM0071-DIE m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. rev b preliminary datasheet 5 all data is at 40oc mmic base temperature, cw stimulus, unless otherwise noted. figure 13. power added efficiency vs. input power and frequency at 8v and 25% idss 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 -10-8-6-4-202468101214 input power (dbm) pae (%) 13 ghz 14 ghz 15 ghz figure 14. drain current vs. input power and frequency at 8v and 25% idss 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 input power (dbm) drain current (a) 13 ghz 14 ghz 15 ghz figure 15. third order intercept vs. output power and frequency at 6v. 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 3 5 7 9 11 13 15 17 19 21 23 25 fundamental output power, single tone (dbm) toi (dbm) 13 ghz 14 ghz 15 ghz figure 16. third order intermod vs. output power and frequency at 6v. 0 10 20 30 40 50 60 70 80 90 100 3 5 7 9 11 13 15 17 19 21 23 25 fundamental output power per tone (dbm) imd3 (dbc) 13 ghz 14 ghz 15 ghz figure 17. third order intercept vs. output power and frequency at 8v. 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 3 5 7 9 11 13 15 17 19 21 23 25 fundamental output power, single tone (dbm) toi (dbm) 13 ghz 14 ghz 15 ghz figure 18. third order intermod vs. output power and frequency at 8v. 0 10 20 30 40 50 60 70 80 90 100 3 5 7 9 11 13 15 17 19 21 23 25 fundamental output power per tone (dbm) imd3 (dbc) 13 ghz 14 ghz 15 ghz
amplifier, power, 1.6w 12.75?15.35 ghz MAAPGM0071-DIE m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. rev b preliminary datasheet 6 all data is at 40oc mmic base temperature, cw stimulus, unless otherwise noted. figure 23. fixture used to characterize MAAPGM0071-DIE under cw stimulus. figure 19. third order intercept vs. output power and frequency at 10v. 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 3 5 7 9 11 13 15 17 19 21 23 25 fundamental output power, single tone (dbm) toi (dbm) 13 ghz 14 ghz 15 ghz figure 20. third order intermod vs. output power and frequency at 10v. 0 10 20 30 40 50 60 70 80 90 100 3 5 7 9 11 13 15 17 19 21 23 25 fundamental output power per tone (dbm) imd3 (dbc) 13 ghz 14 ghz 15 ghz figure 21. third order intercept vs. temperature and frequency at 8v and p out = 26 dbm dcl. 30 32 34 36 38 40 42 44 46 48 50 -30-25-20-15-10-5 0 5 10152025303540455055606570758085 mmic base temperature (oc) toi (dbm) 13 ghz 14 ghz 15 ghz figure 22. third order intermod vs. temperature and frequency at 8v and p out = 26 dbm dcl. 10 15 20 25 30 35 40 45 50 55 60 -30-25-20-15-10-5 0 5 10152025303540455055606570758085 mmic base temperature (oc) imd3 (dbc) 13 ghz 14 ghz 15 ghz
amplifier, power, 1.6w 12.75?15.35 ghz MAAPGM0071-DIE m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. rev b preliminary datasheet 7 pad size ( m) rf in and out 100 x 200 dc drain supply voltage vdd1,2 200 x 100 dc gate supply voltage vgg 150 x 150 size (mils) 4 x 8 8 x 4 6 x 6 dc drain supply voltage vdd3 300 x 150 12 x 6 bond pad dimensions chip edge to bond pad dimensions are shown to the center of the bond pad. mechanical information chip size: 3.000 x 3.150 x 0.075 mm ( 118 x 124 x 3 mils) figure 24. die layout
amplifier, power, 1.6w 12.75?15.35 ghz MAAPGM0071-DIE m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. rev b preliminary datasheet 8 figure 25. recommended operational configuration. wire bond as shown . assembly and bonding diagram 100 pf rf out rf in v gg 0.1 f 100 100 pf 100 pf v dd 0.1 f 100 pf 100 pf 100 pf assembly instructions: die attach: use ausn (80/20) 1 mil. preform sold er. limit time @ 310 c to less than 7 minutes. refer to application note an3017 for more detailed information. wirebonding: bond @ 160 c using standard ball or thermal compression wedge bond techniques. for dc pad c onnections, use either ball or wedge bonds. for best rf performance, use wedge bonds of shorte st length, although ball bonds are also acceptable. biasing note: must apply negative bias to v gg before applying positive bias to v dd to prevent damage to amplifier. die handling: refer to application note an3016.
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